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3D Printing of Silicon Micro and Nano Structures by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Author(s)/Editor(s): Andreas Fischer

Pages in Print Edition: 17PP

Published: 06/01/2013
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A method for additive layer-by-layer fabrication of arbitrarily shaped 3D silicon micro and nano structures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The proposed technology could change and greatly simplify the fabrication of many MEMS, NEMS, and silicon photonic devices without requiring a fully equipped semiconductor cleanroom. This layer-by-layer fabrication method is in principle also viable for the implementation of 3D structures in semiconductors other than silicon. Presented at: SME Annual Conference, June 2-4, 2013, Baltimore, MD.